| PART |
Description |
Maker |
| GM9014 |
Excellent HFE Linearity HFE : HFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| 32401 |
Flexible absorber foil WE-FAS EMI
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| APL5551 |
Dual Channel 500mA/500mA Regulator Reset IC
|
Anpec Electronics
|
| APL5546-AKAI-TRL |
Dual Channel 500mA/500mA Regulator Reset IC
|
Anpec Electronics Coropration
|
| APL5551KI-TR APL5551 APL5551KAI-TR APL5551KAI-TRL |
Dual Channel 500mA/500mA Regulator Reset IC
|
ANPEC[Anpec Electronics Coropration]
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| LT3029MPMSE LT3029IDE LT3029IDEPBF LT3029IDETR LT3 |
Dual 500mA/500mA Low Dropout, Low Noise, Micropower Linear Regulator
|
Linear Technology
|
| SMCJ6.0C SMCJ58CA SMCJ26CA SMCJ75CA SMCJ60C SMCJ16 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
GT 7C 7#12 SKT RECP WALL
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.55W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):60; Collector Current:1A; DC Current Gain Max (hfe):175; Power (Ptot):550mW
|
Bytes
|
| BD15KA5FP-E2 BD15KA5WF-E2 BD15KA5WFP-E2 BDXXKA5W B |
500mA Variable/Fixed Output LDO Regulators Built-in thermal shutdown circuit
low-saturation regulators that are available for output currents up to 500mA.
|
Rohm
|
| SB05-03C |
Schottky Barrier Diode 30V, 500mA Rectifier
30V 500mA Rectifier
30V/ 500mA Rectifier
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
